advance product information july 6, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com key features and performance ? frequency range: dc to 35ghz linear ? 40gb/s optical modulator driver ? 12db small signal gain ? 18 dbm typical output power (4vpp) ? 3db gain adjustment ? < 15ps edge rates ? 4vpp 40gb/s nrz prbs linear ? 0.15um phemt technology ? bias: vd = 5v, id = 135 ma ? chip size: 1.79 x 1.00 x 0.1 mm (0.70 x 0.39 x 0.004 in) primary applications ? test equipment ? ultra wideband ? 40gb/s nrz eam driver ? 40gb/s nrz predriver or gain block dc - 35 ghz wideband amplifier TGA4832-EPU product description the triquint tga4832epu is a medium power wideband agc amplifier which operates from dc to 35 ghz. typical small signal gain is 12db with 3db agc range. typical input and output return losses are >10db. the TGA4832-EPU provides 18 dbm of output power at 1 db gain compression. drain bias may be applied through the output port for best efficiency or through the on-chip drain termination. two stages in cascade demonstrate 3.8vpp output voltage swing with 350mv at the input when stimulated with 40gb/s 2^31-1prbs nrz data. rf ports are dc coupled enabling the user to customize system corner frequencies. the tga4832 requires off-chip decoupling and blocking components. the TGA4832-EPU is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, and jammers. it is also an excellent choice for 40gb/s nrz applications. the tga4832 is capable of driving an electro-absorptive optical modulator (eam) with electrical non-return to zero (nrz) data. in addition, the tga4832 may also be used as a predriver or a receive gain block. bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. each device is 100% dc and rf tested on-wafer to ensure performance compliance. the device is available in die form. measured performance bias conditions: vd = 5v, id = 135ma -15 -12 -9 -6 -3 0 3 6 9 12 15 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 5 10 15 20 25 return loss (db) gain input output `
advance product information july 6, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com table i maximum ratings 1/ symbol parameter v+ vd notes positive supply voltage biased thru on-chip drain termination biased thru the rf output port using a bias tee 10.4 v 6 v 2/, 3 / positive supply current biased thru on-chip drain termination biased thru the rf output port using a bias tee 135 ma 150 ma 3/ power dissipation biased thru on-chip drain termination biased thru the rf output port using a bias tee 1.3 w 0.7 w 3/, 4 / vg | ig | negative gate voltage range gate current +1v to C3 v 10 ma vctrl | ictl | control gate voltage range gate current vd/2 to C3v 10 ma 5/ p in vin rf input sinusoidal continuous wave power 40 gb/s prbs input voltage peak to peak tbd tbd t ch operating channel temperature 117 0 c6/ t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 117 0 c TGA4832-EPU notes: 1 / these ratings represent the maximum operable values for the device. 2 / assure vd - vctrl 8 v. compute vd as follows, vd = v + - id*40 3 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 4 / when operated at this power dissipation with a base plate temperature of 70 c, the median life is 1 e+6 hours. 5 / assure vctrl never exceeds vd during bias up and down sequences. also, assure vctrl never exceeds 5v during normal operation. 6 / junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
advance product information july 6, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA4832-EPU table ii dc probe test (t a = 25 c, nominal) symbol parameter minimum maximum unit i max maximum drain current 45 603 ma v p pinch-off voltage -1 0 v g m transconductance 180 630 v table iii rf specifications (t a = 25 c nominal) note test measurement conditions value units min typ max small signal bw 35 ghz 1/, 2 / small-signal gain magnitude 100khz thru 30ghz 12 db 1/, 2 / gain flatness 100khz thru 30ghz +/-1 db 3/,4 / small signal agc range 100khz thru 30ghz 3 db 1/, 2 / input return loss magnitude 100khz thru 30ghz 10 db 1/, 2 / output return loss magnitude 100khz thru 30ghz 10 db output power at p1db 100khz thru 30ghz 18 dbm 3/, 4 / amplitude 40gb/s nrz 4 vpp notes: 1 / verified at die level on-wafer probe (future requirement, data is not currently available). 2 / small signal s-parameter rf probe bias: v+ = 5 v, vctrl=float, adjust vg to achieve id=100ma 3 / verified by design, mmic assembled onto evaluation platform detailed on page 8. 4 / vin=1v, v+=8v, vctrl=float, and vg adjusted for id=100ma.
advance product information july 6, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA4832-EPU table iv thermal information* parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier) vds = 2.5 v* i d = 135 ma pdiss = 0.34 w 92 64 1.5 e+7 * vds = 2.5v across common gate or common source fet in cascode pair. note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. thermal transfer is conducted thru the bottom of the tga4832 into the mounting carrier. design the mounting interface to assure adequate thermal transfer to the base plate.
advance product information july 6, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA4832-EPU measured fixtured data bias conditions: vd = 5v, id= 135ma 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30 35 40 frequency (ghz) output power @ p1db (dbm) -15 -12 -9 -6 -3 0 3 6 9 12 15 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 5 10 15 20 25 return loss (db) gain input output `
advance product information july 6, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 0 3 6 9 12 15 18 21 24 -5-3-1135791113 input power (dbm) output power (dbm) 1 ghz 35 ghz 40 ghz TGA4832-EPU measured fixtured data bias conditions: vd = 5v, id= 135ma 40gb/s nrz 2^31-1 prbs vin=1.8vpp . 40 gb/s data eye
advance product information july 6, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com bias on 1. disable the ppg 2. set vg=-1v 3. set vctrl = 2.2v (if appliable) 4. increase v+ to 7v observing id. - assure id increased to between 10 and 100ma 5. raise v+ to 10.4v - id should still be between 10 and 100ma 6. make vg more positive until id=135ma . - typical value for vg is -0.3v 7. enable the ppg bias off 1. disable the output of the ppg 2. set vctrl = 0v (if appliable) 3. set v+=0v 4. set vg=0v bias procedure for v+ = 10.4 v operation fiber optic applications note: assure vctrl never exceeds vd during bias on and bias off sequences and during normal operation. TGA4832-EPU bias procedure @ vd = 5v operation 1. bias conditions: vd = 5.0 v, id = 135 ma 2. adjust vg for id = 135 ma 3. adjust vctrl for gain and eye crossing control. vctrl bias is optional 4. positive or negative gate bias may be required to achieve recommended operating point:- 0.5 v < vg < + 0.5 v note: +5v bias operation requires a bias tee
advance product information july 6, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com mechanical drawing TGA4832-EPU 8qlwv ploolphwhuv lqfkhv 7klfnqhvv uhihuhqfhrqo\ &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurisdg &klsvl]hwrohudqfh *1',6%$&.6,'(2)00,& %rqg3dg 5),q %rqg3dg 9fwuo %rqg3dg 9 %rqg3dg 5)2xw9g 5)2xw %rqg3dg 9j 1 ( [ [ [ [ [ [ [ [ [ [
advance product information july 6, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com recommended assembly diagram recommended components: TGA4832-EPU 9fwuo 9 5)2879' 5),1 9j s) 6/& s) 6/&
s) 6/& note: input and output ports are dc coupled. * capacitor value bypassing effective to: none 20 mhz 0.01 uf 4 mhz 0.1 uf 250 khz
advance product information july 6, 2004 10 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com assembly notes: reflow attachment: use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c use alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere adhesive attachment: organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical component pickup and placement: vacuum pencil and/or vacuum collet preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement interconnect: thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200 ? c evaluation platform assembly notes TGA4832-EPU
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